SiC N-Channel MOSFET, 5 A, 1700 V, 3-Pin TO-247 Wolfspeed C2M1000170D

RS-stocknr.:: 145-6660
Fabrikantnummer:: C2M1000170D
Fabrikant:: Wolfspeed

SiC N-Channel MOSFET, 5 A, 1700 V, 3-Pin TO-247 Wolfspeed C2M1000170D

240 op voorraad - levertijd is 1 werkdag(en).

Toegevoegd

Prijs Elk (in eentube van 30)

€ 8,19

(excl. BTW)

€ 9,91

(incl. BTW)

Aantal stuks	Per stuk	Per tube*
30 - 120	€ 8,19	€ 245,70
150 - 270	€ 7,976	€ 239,28
300 +	€ 7,781	€ 233,43
*prijsindicatie

RS-stocknr.:: 145-6660
Fabrikantnummer:: C2M1000170D
Fabrikant:: Wolfspeed

Datasheets

Wetgeving en compliance

Land van herkomst:: CN

Productomschrijving

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Specificaties

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	5 A
Maximum Drain Source Voltage	1700 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	1.4 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.1V
Minimum Gate Threshold Voltage	2.4V
Maximum Power Dissipation	69 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-5 V, +20 V
Number of Elements per Chip	1
Width	5.21mm
Length	16.13mm
Typical Gate Charge @ Vgs	13 nC @ 20 V, 13 nC @ 5 V
Transistor Material	SiC
Maximum Operating Temperature	+150 °C
Height	21.1mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	3.8V

RS-stocknr.:: 145-6660
Fabrikantnummer:: C2M1000170D
Fabrikant:: Wolfspeed