- RS-stocknr.:
- 145-8837
- Fabrikantnummer:
- BSS209PWH6327XTSA1
- Fabrikant:
- Infineon
Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service
- RS-stocknr.:
- 145-8837
- Fabrikantnummer:
- BSS209PWH6327XTSA1
- Fabrikant:
- Infineon
Wetgeving en compliance
- Land van herkomst:
- CN
Productomschrijving
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 500 mA |
Maximum Drain Source Voltage | 20 V |
Package Type | SOT-323 (SC-70) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 900 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1.2V |
Minimum Gate Threshold Voltage | 0.6V |
Maximum Power Dissipation | 300 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -12 V, +12 V |
Width | 1.25mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 1 nC @ 4.5 V |
Length | 2mm |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Series | OptiMOS P |
Height | 0.8mm |
- RS-stocknr.:
- 145-8837
- Fabrikantnummer:
- BSS209PWH6327XTSA1
- Fabrikant:
- Infineon