P-Channel MOSFET, 185 mA, 60 V, 3-Pin SOT-23 Vishay TP0610K-T1-E3
- RS-stocknr.:
- 152-6382
- Fabrikantnummer:
- TP0610K-T1-E3
- Fabrikant:
- Vishay
25 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
200 op voorraad - levertijd is 3 à 5 werkdagen (UK-voorraad)
Toegevoegd
Prijs Elk (in een pakket van 25)
€ 0,106
(excl. BTW)
€ 0,128
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 25 + | € 0,106 | € 2,65 |
| *prijsindicatie | ||
- RS-stocknr.:
- 152-6382
- Fabrikantnummer:
- TP0610K-T1-E3
- Fabrikant:
- Vishay
Datasheets
Wetgeving en compliance
Productomschrijving
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
Halogen-free
Definition
TrenchFET® Power MOSFET
High-Side Switching
Low On-Resistance: 6
Low Threshold: - 2 V (typ.)
Fast Swtiching Speed: 20 ns (typ.)
Low Input Capacitance: 20 pF (typ.)
2000 V ESD Protection
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
Battery Operated Systems
Power Supply Converter Circuits
Solid-State Relays
BENEFITS
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven without Buffer
Definition
TrenchFET® Power MOSFET
High-Side Switching
Low On-Resistance: 6
Low Threshold: - 2 V (typ.)
Fast Swtiching Speed: 20 ns (typ.)
Low Input Capacitance: 20 pF (typ.)
2000 V ESD Protection
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
Battery Operated Systems
Power Supply Converter Circuits
Solid-State Relays
BENEFITS
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven without Buffer
MOSFET Transistors, Vishay Semiconductor
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 185 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 9 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | -3V |
| Minimum Gate Threshold Voltage | -1V |
| Maximum Power Dissipation | 350 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Width | 2.64mm |
| Typical Gate Charge @ Vgs | 1.7 nC @ 10 V |
| Length | 3.04mm |
| Maximum Operating Temperature | +150 °C |
| Height | 1.02mm |
| Forward Diode Voltage | -1.4V |
| Minimum Operating Temperature | -55 °C |