3 N-Channel MOSFET, 2.1 A, 60 V, 3-Pin SOT-23 Nexperia PMV120ENEAR
- RS-stocknr.:
- 153-1930
- Fabrikantnummer:
- PMV120ENEAR
- Fabrikant:
- Nexperia
Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service
- RS-stocknr.:
- 153-1930
- Fabrikantnummer:
- PMV120ENEAR
- Fabrikant:
- Nexperia
Wetgeving en compliance
Productomschrijving
60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.1 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT23, TO-236AB |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 246 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.7V |
| Minimum Gate Threshold Voltage | 1.3V |
| Maximum Power Dissipation | 6.4 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Width | 1.4mm |
| Typical Gate Charge @ Vgs | 5.9 nC |
| Length | 3mm |
| Number of Elements per Chip | 3 |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Automotive Standard | AEC-Q101 |
| Height | 1mm |
- RS-stocknr.:
- 153-1930
- Fabrikantnummer:
- PMV120ENEAR
- Fabrikant:
- Nexperia