N-Channel MOSFET, 20.7 A, 75 V, 4 + Tab-Pin LFPAK Nexperia BUK9Y58-75B,115

RS-stocknr.:: 153-2876
Fabrikantnummer:: BUK9Y58-75B,115
Fabrikant:: Nexperia

N-Channel MOSFET, 20.7 A, 75 V, 4 + Tab-Pin LFPAK Nexperia BUK9Y58-75B,115

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RS-stocknr.:: 153-2876
Fabrikantnummer:: BUK9Y58-75B,115
Fabrikant:: Nexperia

Datasheets

Wetgeving en compliance

Productomschrijving

N-channel TrenchMOS logic level FET, Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for logic level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
General purpose power switching
solenoid drives

Specificaties

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	20.7 A
Maximum Drain Source Voltage	75 V
Package Type	LFPAK
Mounting Type	Surface Mount
Pin Count	4 + Tab
Maximum Drain Source Resistance	145 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.45V
Minimum Gate Threshold Voltage	0.5V
Maximum Power Dissipation	60.4 W
Transistor Configuration	Single
Maximum Gate Source Voltage	15 V
Typical Gate Charge @ Vgs	10.7 nC @ 10 V
Maximum Operating Temperature	+175 °C
Length	5mm
Width	4.1mm
Number of Elements per Chip	1
Automotive Standard	AEC-Q101
Minimum Operating Temperature	-55 °C
Height	1.05mm

RS-stocknr.:: 153-2876
Fabrikantnummer:: BUK9Y58-75B,115
Fabrikant:: Nexperia