N-Channel MOSFET, 17 A, 250 V, 3-Pin D2PAK Infineon IPB17N25S3100ATMA1
- RS-stocknr.:
- 165-5608
- Fabrikantnummer:
- IPB17N25S3100ATMA1
- Fabrikant:
- Infineon
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 02-05-2025, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Elk (op een haspel van 1000)
€ 0,993
(excl. BTW)
€ 1,202
(incl. BTW)
| Aantal stuks | Per stuk | Per reel* |
| 1000 - 1000 | € 0,993 | € 993,00 |
| 2000 + | € 0,943 | € 943,00 |
| *prijsindicatie | ||
- RS-stocknr.:
- 165-5608
- Fabrikantnummer:
- IPB17N25S3100ATMA1
- Fabrikant:
- Infineon
Wetgeving en compliance
Vrijgesteld
- Land van herkomst:
- CN
Productomschrijving
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 17 A |
| Maximum Drain Source Voltage | 250 V |
| Package Type | D2PAK (TO-263) |
| Series | OptiMOS T |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 100 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 107 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 10mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Width | 9.25mm |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V |
| Height | 4.4mm |
| Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 165-5608
- Fabrikantnummer:
- IPB17N25S3100ATMA1
- Fabrikant:
- Infineon