- RS-stocknr.:
- 165-5945
- Fabrikantnummer:
- SPD04P10PLGBTMA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 165-5945
- Fabrikantnummer:
- SPD04P10PLGBTMA1
- Fabrikant:
- Infineon
Wetgeving en compliance
Vrijgesteld
- Land van herkomst:
- CN
Productomschrijving
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 4.2 A |
Maximum Drain Source Voltage | 100 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 1.05 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 38 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 6.73mm |
Width | 6.22mm |
Typical Gate Charge @ Vgs | 12 nC @ 10 V |
Maximum Operating Temperature | +175 °C |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Height | 2.41mm |
Series | SIPMOS |
- RS-stocknr.:
- 165-5945
- Fabrikantnummer:
- SPD04P10PLGBTMA1
- Fabrikant:
- Infineon