SIA416DJ-T1-GE3 N-Channel MOSFET, 11.3 A, 100 V ThunderFET, 6-Pin PowerPAK SC-70 Vishay

  • RS-stocknr. 165-6297
  • Fabrikantnummer SIA416DJ-T1-GE3
  • Fabrikant Vishay
Datasheets
Wetgeving en compliance
Conform
Land van herkomst: CN
Productomschrijving

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specificaties
Kenmerk Waarde
Channel Type N
Maximum Continuous Drain Current 11.3 A
Maximum Drain Source Voltage 100 V
Maximum Drain Source Resistance 130 mΩ
Minimum Gate Threshold Voltage 1.6V
Maximum Gate Source Voltage -20 V, +20 V
Package Type PowerPAK SC-70
Mounting Type Surface Mount
Transistor Configuration Single
Pin Count 6
Channel Mode Enhancement
Maximum Power Dissipation 19 W
Transistor Material Si
Width 2.15mm
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Length 2.15mm
Typical Gate Charge @ Vgs 6.5 nC @ 10 V
Maximum Operating Temperature +150 °C
Series ThunderFET
Height 0.75mm
9000 op voorraad - levertijd is 2 werkdag(en).
Prijs Each (On a Reel of 3000)
0,246
(excl. BTW)
0,298
(incl. BTW)
Aantal stuks
Per stuk
Per reel*
3000 +
€ 0,246
€ 738,00
*prijsindicatie