SI2365EDS-T1-GE3 P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay

  • RS-stocknr. 165-6934
  • Fabrikantnummer SI2365EDS-T1-GE3
  • Fabrikant Vishay
Wetgeving en compliance
Land van herkomst: CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Kenmerk Waarde
Channel Type P
Maximum Continuous Drain Current 4.7 A
Maximum Drain Source Voltage 20 V
Package Type SOT-23 (TO-236)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 67.5 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.4V
Maximum Power Dissipation 1.7 W
Transistor Configuration Single
Maximum Gate Source Voltage -8 V, +8 V
Number of Elements per Chip 1
Height 1.02mm
Typical Gate Charge @ Vgs 23.8 nC @ 8 V
Length 3.04mm
Transistor Material Si
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -50 °C
Width 1.4mm
57000 op voorraad - levertijd is 2 werkdag(en).
Prijs Each (On a Reel of 3000)
(excl. BTW)
(incl. BTW)
Aantal stuks
Per stuk
Per reel*
3000 +
€ 0,075
€ 225,00