- RS-stocknr.:
- 166-1130
- Fabrikantnummer:
- IPB180P04P4L02ATMA1
- Fabrikant:
- Infineon
11000 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Elk (op een haspel van 1000)
€ 1,475
(excl. BTW)
€ 1,785
(incl. BTW)
Aantal stuks | Per stuk | Per reel* |
1000 + | € 1,475 | € 1.475,00 |
*prijsindicatie |
- RS-stocknr.:
- 166-1130
- Fabrikantnummer:
- IPB180P04P4L02ATMA1
- Fabrikant:
- Infineon
Wetgeving en compliance
Vrijgesteld
- Land van herkomst:
- MY
Productomschrijving
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 180 A |
Maximum Drain Source Voltage | 40 V |
Series | OptiMOS P |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 7 |
Maximum Drain Source Resistance | 3.9 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 150 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +16 V |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 220 nC @ 10 V |
Length | 10mm |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +175 °C |
Width | 9.25mm |
Minimum Operating Temperature | -55 °C |
Height | 4.4mm |
Forward Diode Voltage | 1.3V |
- RS-stocknr.:
- 166-1130
- Fabrikantnummer:
- IPB180P04P4L02ATMA1
- Fabrikant:
- Infineon