FDS6930B Dual N-Channel MOSFET, 5.5 A, 30 V PowerTrench, 8-Pin SOIC ON Semiconductor

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PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specificaties
Kenmerk Waarde
Channel Type N
Maximum Continuous Drain Current 5.5 A
Maximum Drain Source Voltage 30 V
Package Type SOIC
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 38 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 2 W
Transistor Configuration Isolated
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 2
Height 1.5mm
Typical Gate Charge @ Vgs 2.7 nC @ 5 V
Minimum Operating Temperature -55 °C
Series PowerTrench
Width 4mm
Length 5mm
Transistor Material Si
Maximum Operating Temperature +150 °C
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 03-06-2020, met een levertijd van 2 à 3 werkdagen.
Prijs Each (On a Reel of 2500)
0,205
(excl. BTW)
0,248
(incl. BTW)
Aantal stuks
Per stuk
Per reel*
2500 +
€ 0,205
€ 512,50
*prijsindicatie
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