Dual N-Channel MOSFET, 30 A, 40 A, 25 V, 8-Pin Power 56 onsemi FDMS3602S
- RS-stocknr.:
- 166-1824
- Fabrikantnummer:
- FDMS3602S
- Fabrikant:
- onsemi
Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service
- RS-stocknr.:
- 166-1824
- Fabrikantnummer:
- FDMS3602S
- Fabrikant:
- onsemi
Wetgeving en compliance
Productomschrijving
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A, 40 A |
| Maximum Drain Source Voltage | 25 V |
| Package Type | Power 56 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 3.9 mΩ, 8.7 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2.2 W, 2.5 W |
| Transistor Configuration | Series |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V, 45 nC @ 10 V |
| Width | 6mm |
| Length | 5mm |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Series | PowerTrench |
| Height | 1.05mm |