N-Channel MOSFET, 37 A, 800 V, 4-Pin SOT-227 IXYS IXFN44N80Q3
- RS-stocknr.:
- 168-4753
- Fabrikantnummer:
- IXFN44N80Q3
- Fabrikant:
- IXYS
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 17-02-2025, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Elk (in eentube van 10)
€ 53,808
(excl. BTW)
€ 65,108
(incl. BTW)
| Aantal stuks | Per stuk | Per tube* |
| 10 + | € 53,808 | € 538,08 |
| *prijsindicatie | ||
- RS-stocknr.:
- 168-4753
- Fabrikantnummer:
- IXFN44N80Q3
- Fabrikant:
- IXYS
Wetgeving en compliance
- Land van herkomst:
- US
Productomschrijving
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 37 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | SOT-227 |
| Series | HiperFET, Q3-Class |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 190 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 6.5V |
| Maximum Power Dissipation | 780 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Width | 25.07mm |
| Typical Gate Charge @ Vgs | 185 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 38.23mm |
| Number of Elements per Chip | 1 |
| Height | 9.6mm |
| Minimum Operating Temperature | -55 °C |