- RS-stocknr.:
- 170-2368
- Fabrikantnummer:
- IRFL4310TRPBF
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 170-2368
- Fabrikantnummer:
- IRFL4310TRPBF
- Fabrikant:
- Infineon
Datasheets
Wetgeving en compliance
Niet conform
Productomschrijving
Dual N-Channel Power MOSFET, Infineon
Infineons dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Benefits:
Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature
Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 2.2 A |
Maximum Drain Source Voltage | 100 V |
Package Type | SOT-223 |
Mounting Type | Surface Mount |
Pin Count | 3 + Tab |
Maximum Drain Source Resistance | 200 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 2.1 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | 20 V |
Typical Gate Charge @ Vgs | 17 nC @ 10 V |
Width | 3.7mm |
Length | 6.7mm |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Series | IRFL4310PbF |
Height | 1.8mm |
Forward Diode Voltage | 1.3V |
Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 170-2368
- Fabrikantnummer:
- IRFL4310TRPBF
- Fabrikant:
- Infineon