- RS-stocknr.:
- 354-4913
- Fabrikantnummer:
- FDV304P
- Fabrikant:
- onsemi
Dit product is momenteel niet beschikbaar voor nabestelling.
We hebben dit product helaas niet op voorraad en het is op dit moment niet beschikbaar voor nabestelling.
Prijs Per stuk
€ 0,39
(excl. BTW)
€ 0,47
(incl. BTW)
Aantal stuks | Per stuk |
1 - 4 | € 0,39 |
5 - 9 | € 0,38 |
10 - 24 | € 0,36 |
25 - 49 | € 0,32 |
50 + | € 0,30 |
- RS-stocknr.:
- 354-4913
- Fabrikantnummer:
- FDV304P
- Fabrikant:
- onsemi
Datasheets
Wetgeving en compliance
Productomschrijving
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
Voltage controlled P-Channel small signal switch
High-Density cell design
High saturation current
Superior switching
Great rugged and reliable performance
DMOS technology
High-Density cell design
High saturation current
Superior switching
Great rugged and reliable performance
DMOS technology
Applications:
Load Switching
DC/DC converter
Battery protection
Power management control
DC motor control
DC/DC converter
Battery protection
Power management control
DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 460 mA |
Maximum Drain Source Voltage | 25 V |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 1.1 Ω |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 0.65V |
Maximum Power Dissipation | 350 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | +8 V |
Width | 1.3mm |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 1.1 nC @ 4.5 V |
Transistor Material | Si |
Length | 2.92mm |
Height | 0.93mm |
Minimum Operating Temperature | -55 °C |