Dual N-Channel MOSFET, 4 A, 60 V, 8-Pin SOIC STMicroelectronics STS4DNF60L
- RS-stocknr.:
- 485-8358
- Fabrikantnummer:
- STS4DNF60L
- Fabrikant:
- STMicroelectronics
14680 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Elk (in een pakket van 5)
€ 2,054
(excl. BTW)
€ 2,485
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 5 - 5 | € 2,054 | € 10,27 |
| 10 - 20 | € 1,828 | € 9,14 |
| 25 - 95 | € 1,73 | € 8,65 |
| 100 - 495 | € 1,358 | € 6,79 |
| 500 + | € 1,144 | € 5,72 |
| *prijsindicatie | ||
- RS-stocknr.:
- 485-8358
- Fabrikantnummer:
- STS4DNF60L
- Fabrikant:
- STMicroelectronics
Datasheets
Wetgeving en compliance
- Land van herkomst:
- CN
Productomschrijving
N-Channel STripFET™ Dual MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Voltage | 60 V |
| Series | STripFET |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 55 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -15 V, +15 V |
| Typical Gate Charge @ Vgs | 15 nC @ 4.5 V |
| Number of Elements per Chip | 2 |
| Transistor Material | Si |
| Length | 5mm |
| Width | 4mm |
| Maximum Operating Temperature | +150 °C |
| Height | 1.25mm |
| Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 485-8358
- Fabrikantnummer:
- STS4DNF60L
- Fabrikant:
- STMicroelectronics