SI2309CDS-T1-GE3 P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay

  • RS-stocknr. 710-3250
  • Fabrikantnummer SI2309CDS-T1-GE3
  • Fabrikant Vishay
Datasheets
Wetgeving en compliance
Conform
Productomschrijving

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specificaties
Kenmerk Waarde
Channel Type P
Maximum Continuous Drain Current 1.2 A
Maximum Drain Source Voltage 60 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 345 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 1 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Transistor Material Si
Typical Gate Charge @ Vgs 2.7 nC @ 4.5 V
Height 1.02mm
Width 1.4mm
Length 3.04mm
Maximum Operating Temperature +150 °C
50 op voorraad - levertijd is 1 werkdag(en)
Prijs Each (In a Pack of 10)
0,358
(excl. BTW)
0,433
(incl. BTW)
Aantal stuks
Per stuk
Per pak*
10 - 20
€ 0,358
€ 3,58
30 - 140
€ 0,233
€ 2,33
150 - 740
€ 0,198
€ 1,98
750 - 1490
€ 0,191
€ 1,91
1500 +
€ 0,187
€ 1,87
*prijsindicatie
Verpakkingsopties