RFD14N05LSM9A N-Channel MOSFET, 14 A, 50 V, 3-Pin DPAK ON Semiconductor

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Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specificaties
Kenmerk Waarde
Channel Type N
Maximum Continuous Drain Current 14 A
Maximum Drain Source Voltage 50 V
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 100 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 48 W
Transistor Configuration Single
Maximum Gate Source Voltage -10 V, +10 V
Number of Elements per Chip 1
Height 2.39mm
Width 6.22mm
Typical Gate Charge @ Vgs 40 nC @ 10 V
Maximum Operating Temperature +175 °C
Transistor Material Si
Minimum Operating Temperature -55 °C
Length 6.73mm
20 op voorraad - levertijd is 1 werkdag(en).
Prijs Each (In a Pack of 10)
0,514
(excl. BTW)
0,622
(incl. BTW)
Aantal stuks
Per stuk
Per pak*
10 - 90
€ 0,514
€ 5,14
100 - 190
€ 0,336
€ 3,36
200 +
€ 0,319
€ 3,19
*prijsindicatie
Verpakkingsopties
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