- RS-stocknr.:
- 787-9018
- Fabrikantnummer:
- TP0610K-T1-GE3
- Fabrikant:
- Vishay
- RS-stocknr.:
- 787-9018
- Fabrikantnummer:
- TP0610K-T1-GE3
- Fabrikant:
- Vishay
Wetgeving en compliance
Productomschrijving
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
Halogen-free
Definition
TrenchFET® Power MOSFET
High-Side Switching
Low On-Resistance: 6
Low Threshold: - 2 V (typ.)
Fast Swtiching Speed: 20 ns (typ.)
Low Input Capacitance: 20 pF (typ.)
2000 V ESD Protection
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
Battery Operated Systems
Power Supply Converter Circuits
Solid-State Relays
BENEFITS
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven without Buffer
Definition
TrenchFET® Power MOSFET
High-Side Switching
Low On-Resistance: 6
Low Threshold: - 2 V (typ.)
Fast Swtiching Speed: 20 ns (typ.)
Low Input Capacitance: 20 pF (typ.)
2000 V ESD Protection
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
Battery Operated Systems
Power Supply Converter Circuits
Solid-State Relays
BENEFITS
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven without Buffer
MOSFET Transistors, Vishay Semiconductor
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 185 mA |
Maximum Drain Source Voltage | 60 V |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 10 Ω |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 350 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 1.4mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Length | 3.04mm |
Typical Gate Charge @ Vgs | 1.7 nC @ 15 V |
Height | 1.02mm |
Minimum Operating Temperature | -55 °C |