- RS-stocknr.:
- 802-4502P
- Fabrikantnummer:
- IXFX80N60P3
- Fabrikant:
- IXYS
31 op voorraad - levertijd is 1 werkdag(en).
Prijs Per stuk (geleverd in een tube)
€ 22,74
(excl. BTW)
€ 27,52
(incl. BTW)
Aantal stuks | Per stuk |
5 - 9 | € 22,74 |
10 - 29 | € 21,75 |
30 - 89 | € 20,14 |
90 + | € 18,54 |
- RS-stocknr.:
- 802-4502P
- Fabrikantnummer:
- IXFX80N60P3
- Fabrikant:
- IXYS
Wetgeving en compliance
Productomschrijving
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 80 A |
Maximum Drain Source Voltage | 600 V |
Series | HiperFET, Polar3 |
Package Type | PLUS247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 70 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 1.3 kW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Width | 5.21mm |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 190 nC @ 10 V |
Length | 16.13mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Height | 21.34mm |