SI2365EDS-T1-GE3 P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay

  • RS-stocknr. 812-3139
  • Fabrikantnummer SI2365EDS-T1-GE3
  • Fabrikant Vishay
Datasheets
Wetgeving en compliance
Conform
Land van herkomst: CN
Productomschrijving

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specificaties
Kenmerk Waarde
Channel Type P
Maximum Continuous Drain Current 4.7 A
Maximum Drain Source Voltage 20 V
Package Type SOT-23 (TO-236)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 67.5 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.4V
Maximum Power Dissipation 1.7 W
Transistor Configuration Single
Maximum Gate Source Voltage -8 V, +8 V
Number of Elements per Chip 1
Transistor Material Si
Typical Gate Charge @ Vgs 23.8 nC @ 8 V
Length 3.04mm
Height 1.02mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -50 °C
Width 1.4mm
3750 op voorraad - levertijd is 1 werkdag(en).
Prijs Each (In a Pack of 50)
0,233
(excl. BTW)
0,282
(incl. BTW)
Aantal stuks
Per stuk
Per pak*
50 - 250
€ 0,233
€ 11,65
300 - 550
€ 0,14
€ 7,00
600 - 1450
€ 0,117
€ 5,85
1500 - 2950
€ 0,081
€ 4,05
3000 +
€ 0,078
€ 3,90
*prijsindicatie
Verpakkingsopties