P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3
- RS-stocknr.:
- 812-3139
- Fabrikantnummer:
- SI2365EDS-T1-GE3
- Fabrikant:
- Vishay
8800 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Elk (in een pakket van 50)
€ 0,285
(excl. BTW)
€ 0,345
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 50 - 450 | € 0,285 | € 14,25 |
| 500 - 1200 | € 0,199 | € 9,95 |
| 1250 - 2450 | € 0,157 | € 7,85 |
| 2500 - 4950 | € 0,142 | € 7,10 |
| 5000 + | € 0,114 | € 5,70 |
| *prijsindicatie | ||
- RS-stocknr.:
- 812-3139
- Fabrikantnummer:
- SI2365EDS-T1-GE3
- Fabrikant:
- Vishay
Wetgeving en compliance
- Land van herkomst:
- CN
Productomschrijving
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 4.7 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 67.5 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 1.7 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Width | 1.4mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 23.8 nC @ 8 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Length | 3.04mm |
| Minimum Operating Temperature | -50 °C |
| Height | 1.02mm |
- RS-stocknr.:
- 812-3139
- Fabrikantnummer:
- SI2365EDS-T1-GE3
- Fabrikant:
- Vishay