P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon SPD30P06PGBTMA1
- RS-stocknr.:
- 898-6864
- Fabrikantnummer:
- SPD30P06PGBTMA1
- Fabrikant:
- Infineon
20 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
20 op voorraad - levertijd is 3 à 5 werkdagen (UK-voorraad)
Toegevoegd
Prijs Elk (in een pakket van 10)
€ 1,322
(excl. BTW)
€ 1,60
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 10 - 40 | € 1,322 | € 13,22 |
| 50 - 240 | € 1,254 | € 12,54 |
| 250 - 490 | € 1,041 | € 10,41 |
| 500 - 1240 | € 0,909 | € 9,09 |
| 1250 + | € 0,725 | € 7,25 |
| *prijsindicatie | ||
- RS-stocknr.:
- 898-6864
- Fabrikantnummer:
- SPD30P06PGBTMA1
- Fabrikant:
- Infineon
Wetgeving en compliance
Vrijgesteld
Productomschrijving
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DPAK (TO-252) |
| Series | SIPMOS |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 75 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 6.22mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V |
| Length | 6.73mm |
| Maximum Operating Temperature | +175 °C |
| Height | 2.41mm |
| Forward Diode Voltage | 1.7V |
| Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 898-6864
- Fabrikantnummer:
- SPD30P06PGBTMA1
- Fabrikant:
- Infineon