N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK Texas Instruments CSD19536KTTT
- RS-stocknr.:
- 900-9857
- Fabrikantnummer:
- CSD19536KTTT
- Fabrikant:
- Texas Instruments
536 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk
€ 6,39
(excl. BTW)
€ 7,73
(incl. BTW)
| Aantal stuks | Per stuk |
| 1 - 4 | € 6,39 |
| 5 - 9 | € 6,26 |
| 10 - 14 | € 6,06 |
| 15 - 24 | € 6,02 |
| 25 + | € 5,82 |
- RS-stocknr.:
- 900-9857
- Fabrikantnummer:
- CSD19536KTTT
- Fabrikant:
- Texas Instruments
Datasheets
Wetgeving en compliance
Productomschrijving
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 272 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | D2PAK (TO-263) |
| Series | NexFET |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Length | 10.67mm |
| Typical Gate Charge @ Vgs | 118 nC @ 0 V |
| Width | 9.65mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Forward Diode Voltage | 1.1V |
| Height | 4.83mm |
| Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 900-9857
- Fabrikantnummer:
- CSD19536KTTT
- Fabrikant:
- Texas Instruments