- RS-stocknr.:
- 900-9857P
- Fabrikantnummer:
- CSD19536KTTT
- Fabrikant:
- Texas Instruments
- RS-stocknr.:
- 900-9857P
- Fabrikantnummer:
- CSD19536KTTT
- Fabrikant:
- Texas Instruments
Datasheets
Wetgeving en compliance
Productomschrijving
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 272 A |
Maximum Drain Source Voltage | 100 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 2.8 mΩ |
Channel Mode | Enhancement |
Maximum Power Dissipation | 375 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Width | 9.65mm |
Typical Gate Charge @ Vgs | 118 nC @ 0 V |
Length | 10.67mm |
Maximum Operating Temperature | +175 °C |
Height | 4.83mm |
Forward Diode Voltage | 1.1V |
Series | NexFET |
Minimum Operating Temperature | -55 °C |