- RS-stocknr.:
- 913-4020
- Fabrikantnummer:
- IRF7351PBF
- Fabrikant:
- Infineon
Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service
- RS-stocknr.:
- 913-4020
- Fabrikantnummer:
- IRF7351PBF
- Fabrikant:
- Infineon
Datasheets
Wetgeving en compliance
- Land van herkomst:
- TH
Productomschrijving
Dual N-Channel Power MOSFET, Infineon
Infineons dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 8 A |
Maximum Drain Source Voltage | 60 V |
Package Type | SOIC |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 17.8 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 2 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 2 |
Transistor Material | Si |
Width | 4mm |
Typical Gate Charge @ Vgs | 24 nC @ 10 V |
Length | 5mm |
Maximum Operating Temperature | +150 °C |
Height | 1.5mm |
Series | HEXFET |
Minimum Operating Temperature | -55 °C |