IRF540NPBF N-Channel MOSFET, 33 A, 100 V HEXFET, 3-Pin TO-220AB Infineon

  • RS-stocknr. 914-8154
  • Fabrikantnummer IRF540NPBF
  • Fabrikant Infineon
Datasheets
Wetgeving en compliance
Conform
Land van herkomst: CN
Productomschrijving

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specificaties
Kenmerk Waarde
Channel Type N
Maximum Continuous Drain Current 33 A
Maximum Drain Source Voltage 100 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 44 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 130 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Maximum Operating Temperature +175 °C
Width 4.69mm
Transistor Material Si
Length 10.54mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 71 nC @ 10 V
Series HEXFET
Height 8.77mm
400 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
1580 op voorraad - levertijd is 1 werkdag(en) (UK-voorraad)
Prijs Each (In a Pack of 20)
0,819
(excl. BTW)
0,991
(incl. BTW)
Aantal stuks
Per stuk
Per pak*
20 - 80
€ 0,819
€ 16,38
100 - 280
€ 0,571
€ 11,42
300 - 580
€ 0,543
€ 10,86
600 +
€ 0,507
€ 10,14
*prijsindicatie
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