SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0280120D

RS-stocknr.:: 915-8820
Fabrikantnummer:: C2M0280120D
Fabrikant:: Wolfspeed

SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0280120D

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RS-stocknr.:: 915-8820
Fabrikantnummer:: C2M0280120D
Fabrikant:: Wolfspeed

Datasheets

Wetgeving en compliance

Land van herkomst:: CN

Productomschrijving

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Specificaties

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	10 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	370 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	62.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	+25 V
Transistor Material	SiC
Typical Gate Charge @ Vgs	20.4 nC @ 20 V
Maximum Operating Temperature	+150 °C
Width	21.1mm
Length	16.13mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	3.3V
Height	5.21mm

RS-stocknr.:: 915-8820
Fabrikantnummer:: C2M0280120D
Fabrikant:: Wolfspeed