- RS-stocknr.:
- 919-0262
- Fabrikantnummer:
- SI2309CDS-T1-GE3
- Fabrikant:
- Vishay
- RS-stocknr.:
- 919-0262
- Fabrikantnummer:
- SI2309CDS-T1-GE3
- Fabrikant:
- Vishay
Datasheets
Wetgeving en compliance
- Land van herkomst:
- CN
Productomschrijving
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 1.2 A |
Maximum Drain Source Voltage | 60 V |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 345 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 1 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Transistor Material | Si |
Length | 3.04mm |
Typical Gate Charge @ Vgs | 2.7 nC @ 4.5 V |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Width | 1.4mm |
Height | 1.02mm |
Minimum Operating Temperature | -55 °C |