SI2309CDS-T1-GE3 P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay

  • RS-stocknr. 919-0262
  • Fabrikantnummer SI2309CDS-T1-GE3
  • Fabrikant Vishay
Datasheets
Wetgeving en compliance
Conform
Land van herkomst: CN
Productomschrijving

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specificaties
Kenmerk Waarde
Channel Type P
Maximum Continuous Drain Current 1.2 A
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 345 mΩ
Minimum Gate Threshold Voltage 1V
Maximum Gate Source Voltage -20 V, +20 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 1 W
Transistor Material Si
Length 3.04mm
Maximum Operating Temperature +150 °C
Height 1.02mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 2.7 nC @ 4.5 V
Number of Elements per Chip 1
Width 1.4mm
27000 op voorraad - levertijd is 2 werkdag(en).
Prijs Each (On a Reel of 3000)
0,175
(excl. BTW)
0,212
(incl. BTW)
Aantal stuks
Per stuk
Per reel*
3000 - 6000
€ 0,175
€ 525,00
9000 +
€ 0,17
€ 510,00
*prijsindicatie