SI2319CDS-T1-GE3 P-Channel MOSFET, 4.4 A, 40 V, 3-Pin SOT-23 Vishay

  • RS-stocknr. 919-4208
  • Fabrikantnummer SI2319CDS-T1-GE3
  • Fabrikant Vishay
Datasheets
Wetgeving en compliance
Conform
Land van herkomst: CN
Productomschrijving

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS
• Load Switch
• DC/DC Converter

MOSFET Transistors, Vishay Semiconductor

Specificaties
Kenmerk Waarde
Channel Type P
Maximum Continuous Drain Current 4.4 A
Maximum Drain Source Voltage 40 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 108 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 2.5 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 13.6 nC @ 10 V
Length 3.04mm
Maximum Operating Temperature +150 °C
Width 1.4mm
Transistor Material Si
Height 1.02mm
Minimum Operating Temperature -55 °C
36000 op voorraad - levertijd is 2 werkdag(en).
Prijs Each (On a Reel of 3000)
0,174
(excl. BTW)
0,211
(incl. BTW)
Aantal stuks
Per stuk
Per reel*
3000 - 6000
€ 0,174
€ 522,00
9000 +
€ 0,168
€ 504,00
*prijsindicatie