N-Channel MOSFET, 63 A, 100 V, 3-Pin DPAK Infineon IRLR3110ZPBF
- RS-stocknr.:
- 650-4514P
- Fabrikantnummer:
- IRLR3110ZPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal 25 eenheden (geleverd in een buis)*
€ 38,80
(excl. BTW)
€ 46,95
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 25 - 95 | € 1,552 |
| 100 - 245 | € 1,358 |
| 250 - 495 | € 1,268 |
| 500 + | € 1,198 |
*prijsindicatie
- RS-stocknr.:
- 650-4514P
- Fabrikantnummer:
- IRLR3110ZPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 63 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 14 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 140 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 34 nC @ 4.5 V | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Series | HEXFET | |
| Height | 2.39mm | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 63 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 14 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Width 6.22mm | ||
Length 6.73mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 34 nC @ 4.5 V | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Series HEXFET | ||
Height 2.39mm | ||