onsemi MJH11019G Digital Transistor, -200 V PNP Through Hole SOT-93, 3-Pin

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 2 eenheden)*

€ 8,80

(excl. BTW)

€ 10,64

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 164 stuk(s) vanaf 27 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks
Per stuk
Per verpakking*
2 - 18€ 4,40€ 8,80
20 +€ 3,795€ 7,59

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
186-8066
Fabrikantnummer:
MJH11019G
Fabrikant:
onsemi
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

onsemi

Product Type

Digital Transistor

Package Type

SOT-93

Maximum Collector Emitter Voltage Vceo

-200V

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

150V

Transistor Polarity

PNP

Minimum DC Current Gain hFE

100

Maximum Emitter Base Voltage VEBO

5V dc

Maximum Power Dissipation Pd

150W

Maximum Operating Temperature

150°C

Pin Count

3

Length

15.2mm

Height

20.35mm

Standards/Approvals

No

Automotive Standard

No

Land van herkomst:
CN
The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications. The MJH11017, MJH11019, MJH11021 (PNP), MJH11018, MJH11020, MJH11022 (NPN) are complementary devices.

High DC Current Gain @ 10 Adc - hFE = 400 Min (All Types)

Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) MJH11018, 17 VCEO(sus) = 200 Vdc (Min) - MJH11020, 19 VCEO(sus) = 250 Vdc (Min) - MJH11022, 21

Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A

Monolithic Construction

Pb-Free Packages are Available

Gerelateerde Links