Nexperia BSP51,115 NPN Darlington Transistor, 1 A 60 V HFE:1000, 3 + Tab-Pin SOT-223
- RS-stocknr.:
- 725-8467
- Fabrikantnummer:
- BSP51,115
- Fabrikant:
- Nexperia
Subtotaal (1 verpakking van 10 eenheden)*
€ 6,94
(excl. BTW)
€ 8,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 20 stuk(s) vanaf 26 januari 2026
- Plus verzending 890 stuk(s) vanaf 04 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 0,694 | € 6,94 |
*prijsindicatie
- RS-stocknr.:
- 725-8467
- Fabrikantnummer:
- BSP51,115
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Transistor Type | NPN | |
| Maximum Continuous Collector Current | 1 A | |
| Maximum Collector Emitter Voltage | 60 V | |
| Maximum Emitter Base Voltage | 5 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 + Tab | |
| Transistor Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Minimum DC Current Gain | 1000 | |
| Maximum Base Emitter Saturation Voltage | 1.9 V | |
| Maximum Collector Base Voltage | 80 V | |
| Maximum Collector Emitter Saturation Voltage | 1.3 V | |
| Maximum Collector Cut-off Current | 0.00005mA | |
| Maximum Power Dissipation | 1.25 W | |
| Length | 6.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.7mm | |
| Dimensions | 6.7 x 3.7 x 1.7mm | |
| Minimum Operating Temperature | -65 °C | |
| Height | 1.7mm | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Transistor Type NPN | ||
Maximum Continuous Collector Current 1 A | ||
Maximum Collector Emitter Voltage 60 V | ||
Maximum Emitter Base Voltage 5 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 + Tab | ||
Transistor Configuration Single | ||
Number of Elements per Chip 1 | ||
Minimum DC Current Gain 1000 | ||
Maximum Base Emitter Saturation Voltage 1.9 V | ||
Maximum Collector Base Voltage 80 V | ||
Maximum Collector Emitter Saturation Voltage 1.3 V | ||
Maximum Collector Cut-off Current 0.00005mA | ||
Maximum Power Dissipation 1.25 W | ||
Length 6.7mm | ||
Maximum Operating Temperature +150 °C | ||
Width 3.7mm | ||
Dimensions 6.7 x 3.7 x 1.7mm | ||
Minimum Operating Temperature -65 °C | ||
Height 1.7mm | ||
- Land van herkomst:
- CN
Darlington Transistors, Nexperia
Bipolar Transistors, Nexperia
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