Services
Support
Pakket traceren
Inloggen / Registreer
Log in
/
Registreer
om gebruik te maken van uw voordelen
Menu
Fabrikantnummer
Onlangs gezocht
Automation & Control Gear
Cables & Wires
Enclosures & Server Racks
Fuses & Circuit Breakers
HVAC, Fans & Thermal Management
Lighting
Relays & Signal Conditioning
Switches
Batteries & Chargers
Connectors
Displays & Optoelectronics
ESD Control, Cleanroom & PCB Prototyping
Passive Components
Power Supplies & Transformers
Raspberry Pi, Arduino, ROCK, STEM Education & Development Tools
Semiconductors
Access, Storage & Material Handling
Adhesives, Sealants & Tapes
Bearings & Seals
Engineering Materials & Industrial Hardware
Fasteners & Fixings
Hand Tools
Mechanical Power Transmission
Plumbing & Pipeline
Pneumatics & Hydraulics
Power Tools, Soldering & Welding
Computing & Peripherals
Facilities Cleaning & Maintenance
Office Supplies
Personal Protective Equipment & Workwear
Security & Ironmongery
Site Safety
Test & Measurement
Semiconductors
Discrete Semiconductors
Darlington Pairs
Semiconductors
Discrete Semiconductors
Darlington Pairs
Infineon BCV61BE6327HTSA1 Dual NPN Darlington Pair, 100 mA 30 V HFE:100, 4-Pin SOT-143
RS-stocknr.:
752-8079
Fabrikantnummer:
BCV61BE6327HTSA1
Fabrikant:
Infineon
Bekijk deze categorie
Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service
RS-stocknr.:
752-8079
Fabrikantnummer:
BCV61BE6327HTSA1
Fabrikant:
Infineon
Datasheets
Wetgeving en compliance
Productomschrijving
Specificaties
BCV61, NPN Silicon Double Transistor
ESD Control Selection Guide V1
Conform
Verklaring van overeenstemming
Darlington Transistors, Infineon
Bipolar Transistors, Infineon
Kenmerk
Waarde
Transistor Type
NPN
Maximum Continuous Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
6 V
Package Type
SOT-143
Mounting Type
Surface Mount
Pin Count
4
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
900 mV
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
600 mV
Maximum Collector Cut-off Current
5µA
Height
0.9mm
Width
1.3mm
Dimensions
2.9 x 1.3 x 0.9mm
Maximum Power Dissipation
300 mW
Length
2.9mm
Maximum Operating Temperature
+150 °C
RS-stocknr.:
752-8079
Fabrikantnummer:
BCV61BE6327HTSA1
Fabrikant:
Infineon
Datasheets
Wetgeving en compliance
Productomschrijving
Specificaties
BCV61, NPN Silicon Double Transistor
ESD Control Selection Guide V1
Conform
Verklaring van overeenstemming
Darlington Transistors, Infineon
Bipolar Transistors, Infineon
Kenmerk
Waarde
Transistor Type
NPN
Maximum Continuous Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
6 V
Package Type
SOT-143
Mounting Type
Surface Mount
Pin Count
4
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
900 mV
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
600 mV
Maximum Collector Cut-off Current
5µA
Height
0.9mm
Width
1.3mm
Dimensions
2.9 x 1.3 x 0.9mm
Maximum Power Dissipation
300 mW
Length
2.9mm
Maximum Operating Temperature
+150 °C