Cypress Semiconductor, FM3164-G

256-Kbit ferroelectric random access memory (F-RAM)
Logically organized as 32 K ´ 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
High Integration Device Replaces Multiple Parts
Serial Non volatile memory
Real time clock (RTC) with alarm
Low VDD detection drives reset
Watchdog window timer
Early power-fail warning / NMI
16-bit Non volatile event counter
Serial number with write-lock for security
Real-time Clock/Calendar
Backup current at 2 V: 1.15 μA at +25 °C
Seconds through centuries in BCD format
Tracks leap years through 2099
Uses standard 32.768 kHz crystal (6 pF/12.5 pF)
Software calibration
Supports battery or capacitor backup
Programmable watchdog window timer
Non volatile event counter tracks system intrusions or other events
Comparator for power-fail interrupt or other use
64-bit programmable serial number with lock
Fast serial peripheral interface (SPI)
Up to 16-MHz frequency
RTC, Supervisor controlled via SPI interface
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
1.1 mA active current at 1 MHz
150 μA standby current
Operating voltage: VDD = 2.7 V to 3.6 V
Industrial temperature: –40 °C to +85 °C