Infineon IKW40T120FKSA1 IGBT, 75 A 1200 V, 3-Pin TO-247

  • RS-stocknr. 110-7775
  • Fabrikantnummer IKW40T120FKSA1
  • Fabrikant Infineon
Datasheets
Wetgeving en compliance
Conform
Productomschrijving

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specificaties
Kenmerk Waarde
Maximum Continuous Collector Current 75 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 270 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 16.13mm
Width 5.21mm
Height 21.1mm
Dimensions 16.13 x 5.21 x 21.1mm
Minimum Operating Temperature -40 °C
Gate Capacitance 2500pF
Energy Rating 10.4mJ
Maximum Operating Temperature +150 °C
170 op voorraad - levertijd is 1 werkdag(en).
Prijs Each (In a Pack of 2)
8,375
(excl. BTW)
10,134
(incl. BTW)
Aantal stuks
Per stuk
Per pak*
2 - 8
€ 8,375
€ 16,75
10 - 48
€ 7,575
€ 15,15
50 - 98
€ 7,225
€ 14,45
100 - 248
€ 6,275
€ 12,55
250 +
€ 6,005
€ 12,01
*prijsindicatie
Verpakkingsopties
Related Products
A Bridge Rectifier is a diode common application, ...
Description:
A Bridge Rectifier is a diode common application, known for converting an Alternating Current (AC) input into Direct Current a (DC) output. A diode bridge is an arrangement of four diodes in a bridge circuit configuration that provides the same ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...