Infineon IKP15N60TXKSA1, Type N-Channel IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole
- RS-stocknr.:
- 110-7783
- Fabrikantnummer:
- IKP15N60TXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 10,00
(excl. BTW)
€ 12,10
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Verzending 540 stuk(s) vanaf 23 maart 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,00 | € 10,00 |
| 50 - 90 | € 0,949 | € 9,49 |
| 100 - 240 | € 0,91 | € 9,10 |
| 250 - 490 | € 0,87 | € 8,70 |
| 500 + | € 0,81 | € 8,10 |
*prijsindicatie
- RS-stocknr.:
- 110-7783
- Fabrikantnummer:
- IKP15N60TXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 26A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 130W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| Energy Rating | 0.81mJ | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 26A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 130W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Series TrenchStop | ||
Automotive Standard No | ||
Energy Rating 0.81mJ | ||
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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