- RS-stocknr.:
- 124-9046
- Fabrikantnummer:
- FF200R12KT4HOSA1
- Fabrikant:
- Infineon
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 08-05-2024, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Elk (in een doos van 10)
€ 111,453
(excl. BTW)
€ 134,858
(incl. BTW)
Aantal stuks | Per stuk | Per Doos* |
10 - 10 | € 111,453 | € 1.114,53 |
20 + | € 105,88 | € 1.058,80 |
*prijsindicatie |
- RS-stocknr.:
- 124-9046
- Fabrikantnummer:
- FF200R12KT4HOSA1
- Fabrikant:
- Infineon
Datasheets
Wetgeving en compliance
Productomschrijving
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 320 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 1100 W |
Configuration | Series |
Package Type | 62MM Module |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Series |
Dimensions | 106.4 x 61.4 x 30.9mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +150 °C |
- RS-stocknr.:
- 124-9046
- Fabrikantnummer:
- FF200R12KT4HOSA1
- Fabrikant:
- Infineon