IXYS, Type N-Channel high Speed IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

Subtotaal (1 tube van 30 eenheden)*

€ 178,77

(excl. BTW)

€ 216,30

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Bestellingen onder € 75,00 (excl. BTW) € 5,95.
Tijdelijk niet op voorraad
  • Verzending vanaf 03 februari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per tube*
30 +€ 5,959€ 178,77

*prijsindicatie

RS-stocknr.:
146-1766
Fabrikantnummer:
IXYH30N120C3
Fabrikant:
IXYS
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

IXYS

Product Type

high Speed IGBT

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

500W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

50kHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

3.7V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Length

20.32mm

Standards/Approvals

International Standard Packages

Series

1200V XPT GenX3

Width

16.26 mm

Automotive Standard

No

Land van herkomst:
US

IGBT Discretes, IXYS XPT series


The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)

Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage

Short circuit capability for 10usec

Positive on-state voltage temperature coefficient

Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes

International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Gerelateerde Links

Recently viewed