STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 168-7096
- Fabrikantnummer:
- STGW60H65DFB
- Fabrikant:
- STMicroelectronics
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 05-05-2025, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Elk (in eentube van 30)
€ 4,211
(excl. BTW)
€ 5,095
(incl. BTW)
| Aantal stuks | Per stuk | Per tube* |
| 30 - 30 | € 4,211 | € 126,33 |
| 60 - 120 | € 3,369 | € 101,07 |
| 150 + | € 3,032 | € 90,96 |
| *prijsindicatie | ||
- RS-stocknr.:
- 168-7096
- Fabrikantnummer:
- STGW60H65DFB
- Fabrikant:
- STMicroelectronics
Wetgeving en compliance
- Land van herkomst:
- CN
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |