- RS-stocknr.:
- 168-8768
- Fabrikantnummer:
- FP10R12W1T4B11BOMA1
- Fabrikant:
- Infineon
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 08-04-2026, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Elk (in een doos van 24)
€ 34,208
(excl. BTW)
€ 41,392
(incl. BTW)
Aantal stuks | Per stuk | Per Doos* |
24 - 24 | € 34,208 | € 820,992 |
48 + | € 32,498 | € 779,952 |
*prijsindicatie |
- RS-stocknr.:
- 168-8768
- Fabrikantnummer:
- FP10R12W1T4B11BOMA1
- Fabrikant:
- Infineon
Wetgeving en compliance
- Land van herkomst:
- CN
Productomschrijving
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 20 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 105 W |
Configuration | Common Collector |
Package Type | EASY1B |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 23 |
Switching Speed | 1MHz |
Transistor Configuration | 3 Phase |
Dimensions | 48 x 33.8 x 12mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +150 °C |
- RS-stocknr.:
- 168-8768
- Fabrikantnummer:
- FP10R12W1T4B11BOMA1
- Fabrikant:
- Infineon