Infineon FP10R12W1T4B11BOMA1, Type N-Channel IGBT Module, 20 A 1200 V, 23-Pin EASY1B, Clamp
- RS-stocknr.:
- 168-8768
- Fabrikantnummer:
- FP10R12W1T4B11BOMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 doos van 24 eenheden)*
€ 548,928
(excl. BTW)
€ 664,20
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 14 februari 2028
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per Doos* |
|---|---|---|
| 24 - 24 | € 22,872 | € 548,93 |
| 48 + | € 21,728 | € 521,47 |
*prijsindicatie
- RS-stocknr.:
- 168-8768
- Fabrikantnummer:
- FP10R12W1T4B11BOMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 20A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 105W | |
| Package Type | EASY1B | |
| Mount Type | Clamp | |
| Channel Type | Type N | |
| Pin Count | 23 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Operating Temperature | 150°C | |
| Length | 48mm | |
| Standards/Approvals | No | |
| Height | 12mm | |
| Width | 33.8 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 20A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 105W | ||
Package Type EASY1B | ||
Mount Type Clamp | ||
Channel Type Type N | ||
Pin Count 23 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Operating Temperature 150°C | ||
Length 48mm | ||
Standards/Approvals No | ||
Height 12mm | ||
Width 33.8 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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