onsemi FGY75T95LQDT IGBT 950 V, 3-Pin TO-247, Through Hole

Trench Field Stop 4th generation Low Vcesat IGBT co−packaged with full current rated diode

Maximum Junction Temperature : TJ = 175℃
Positive Temperature Co−efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(Sat) = 1.31 V (Typ.) @ IC = 75 A
Fast Switching
Tighten Parameter Distribution
These Devices are Pb−Free