onsemi, Type N-Channel IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 214-8787
- Fabrikantnummer:
- AFGY120T65SPD
- Fabrikant:
- onsemi
Subtotaal (1 tube van 30 eenheden)*
€ 239,52
(excl. BTW)
€ 289,83
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tekort aan aanbod
- Plus verzending 360 stuk(s) vanaf 02 juni 2026
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 + | € 7,984 | € 239,52 |
*prijsindicatie
- RS-stocknr.:
- 214-8787
- Fabrikantnummer:
- AFGY120T65SPD
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current Ic | 120A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 714W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Series | AFGY120T65SPD | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current Ic 120A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 714W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Series AFGY120T65SPD | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The ON Semiconductor AFGY series is IGBT with soft fast recovery diode which offers very low conduction and switch losses for a high efficiency operation in various applications, rugged transient reliability and low EMI.
Tight parameter distribution
High input impedance
Short circuit ruggedness
Co−packed with soft fast recovery diode