Infineon IGB50N65S5ATMA1, Type N-Channel IGBT, 80 A 650 V, 3-Pin PG-TO-263, Surface
- RS-stocknr.:
- 226-6063
- Fabrikantnummer:
- IGB50N65S5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 15,30
(excl. BTW)
€ 18,50
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 3,06 | € 15,30 |
| 25 - 45 | € 2,752 | € 13,76 |
| 50 - 120 | € 2,57 | € 12,85 |
| 125 - 245 | € 2,388 | € 11,94 |
| 250 + | € 2,234 | € 11,17 |
*prijsindicatie
- RS-stocknr.:
- 226-6063
- Fabrikantnummer:
- IGB50N65S5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 270W | |
| Package Type | PG-TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Series | TrenchStop | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 270W | ||
Package Type PG-TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Operating Temperature 175°C | ||
Series TrenchStop | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IGB50N65S is 50 A IGBT with anti-parallel diode with no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.
Very low VCEsat of 1.35 V at 25°C
Maximum junction temperature Tvj 175°C
four times nominal current
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