Infineon IHW30N120R5XKSA1, N-Channel IGBT Single Transistor IC, 60 A 1200 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 226-6078
- Fabrikantnummer:
- IHW30N120R5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 21,19
(excl. BTW)
€ 25,64
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 5 stuk(s) klaar voor verzending
- 1.640 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 260 stuk(s) vanaf 23 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 4,238 | € 21,19 |
| 25 - 45 | € 2,798 | € 13,99 |
| 50 - 120 | € 2,584 | € 12,92 |
| 125 - 245 | € 2,42 | € 12,10 |
| 250 + | € 2,246 | € 11,23 |
*prijsindicatie
- RS-stocknr.:
- 226-6078
- Fabrikantnummer:
- IHW30N120R5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 60A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 330W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Maximum Gate Emitter Voltage VGEO | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 16.13mm | |
| Series | Resonant Switching | |
| Length | 42mm | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 60A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 330W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Maximum Gate Emitter Voltage VGEO 25 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 16.13mm | ||
Series Resonant Switching | ||
Length 42mm | ||
Height 5.21mm | ||
Automotive Standard No | ||
The Infineon IHW30N120R5 power full monolithic body diode with low forward voltage designed for soft commutation only and has high ruggedness, temperature stable behaviour with low VCEsat.
Very tight parameter distribution
Low EMI
Gerelateerde Links
- Infineon 60 A 1200 V Through Hole
- Infineon IGBT Single Transistor IC 3-Pin PG-TO-247
- Infineon IHW20N120R5XKSA1 IGBT Single Transistor IC 3-Pin PG-TO-247
- Infineon 30 A 1200 V Through Hole
- Infineon 150 A 1200 V Through Hole
- Infineon 80 A 1200 V Through Hole
- Infineon IKY40N120CS6XKSA1 80 A 1200 V Through Hole
- Infineon IKQ75N120CS6XKSA1 150 A 1200 V Through Hole
