STMicroelectronics IGBT 1200 V, 3-Pin
- RS-stocknr.:
- 244-3195P
- Fabrikantnummer:
- STGYA50H120DF2
- Fabrikant:
- STMicroelectronics
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Subtotaal 2 eenheden (geleverd in een buis)*
€ 11,66
(excl. BTW)
€ 14,10
(incl. BTW)
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- Plus verzending 290 stuk(s) vanaf 25 mei 2026
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Aantal stuks | Per stuk |
|---|---|
| 2 + | € 5,83 |
*prijsindicatie
- RS-stocknr.:
- 244-3195P
- Fabrikantnummer:
- STGYA50H120DF2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 535W | |
| Pin Count | 3 | |
| Switching Speed | 5μs | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Series | H | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 535W | ||
Pin Count 3 | ||
Switching Speed 5μs | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Series H | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Maximum junction temperature TJ = 175 °C
5 μs of short-circuit withstand time
Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast recovery antiparallel diode