STMicroelectronics IGBT, 50 A 1200 V, 3-Pin, Through Hole
- RS-stocknr.:
- 248-4896P
- Fabrikantnummer:
- STGYA50M120DF3
- Fabrikant:
- STMicroelectronics
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*prijsindicatie
- RS-stocknr.:
- 248-4896P
- Fabrikantnummer:
- STGYA50M120DF3
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 535W | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 15.9mm | |
| Height | 5.1mm | |
| Width | 21.1 mm | |
| Series | STGYA50M120DF3 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 535W | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 15.9mm | ||
Height 5.1mm | ||
Width 21.1 mm | ||
Series STGYA50M120DF3 | ||
Automotive Standard No | ||
The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low loss and the short circuit functionality is essential. Furthermore, the positive VCEsat temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Maximum junction temperature of 175 degree C
10 μs of short circuit withstand time
Low VCEsat
Tight parameter distribution
Positive VCEsat temperature coefficient
Low thermal resistance
Soft and fast recovery antiparallel diode