Infineon IGP50N60TXKSA1 IGBT Module, 50 A 600 V TO-220
- RS-stocknr.:
- 259-1525
- Fabrikantnummer:
- IGP50N60TXKSA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 2 eenheden)*
€ 6,43
(excl. BTW)
€ 7,78
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 456 stuk(s) vanaf 16 maart 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 + | € 3,215 | € 6,43 |
*prijsindicatie
- RS-stocknr.:
- 259-1525
- Fabrikantnummer:
- IGP50N60TXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 333W | |
| Package Type | TO-220 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Series | TRENCHSTOPTM | |
| Standards/Approvals | JEDEC1 | |
| Width | 10.36 mm | |
| Length | 29.95mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 333W | ||
Package Type TO-220 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Series TRENCHSTOPTM | ||
Standards/Approvals JEDEC1 | ||
Width 10.36 mm | ||
Length 29.95mm | ||
Automotive Standard No | ||
The Infineon low loss IGBT has easy parallel switching capability due to positive temperature coefficient in Vcesat. It is high ruggedness, temperature stable behaviour. It is very soft, fast recovery anti-parallel emitter controlled diode.
Maximum junction temperature 175°C
Short circuit withstand time 5 micro second
Low EMI
Low gate charge
Very tight parameter distribution
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