STMicroelectronics IGBT, 80 A 650 V, 3-Pin TO-247
- RS-stocknr.:
- 261-5072P
- Fabrikantnummer:
- STGWA80H65DFBAG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal 5 eenheden (geleverd in een buis)*
€ 28,10
(excl. BTW)
€ 34,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Verzending vanaf 22 maart 2027
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Aantal stuks | Per stuk |
|---|---|
| 5 - 9 | € 5,62 |
| 10 - 14 | € 5,34 |
| 15 - 19 | € 5,08 |
| 20 + | € 4,82 |
*prijsindicatie
- RS-stocknr.:
- 261-5072P
- Fabrikantnummer:
- STGWA80H65DFBAG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 535W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 15V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5mm | |
| Length | 15.8mm | |
| Width | 21 mm | |
| Standards/Approvals | No | |
| Series | STGWA | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 535W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 15V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 5mm | ||
Length 15.8mm | ||
Width 21 mm | ||
Standards/Approvals No | ||
Series STGWA | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics IGBT is developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High-speed switching series
Maximum junction temperature TJ is 175 degree C
Minimized tail current
Tight parameter distribution
Positive temperature VCE(sat) coefficient
Soft and very fast recovery antiparallel diode