Infineon FP75R12N2T7BPSA2, Type N-Channel Common Emitter IGBT, 75 A 1200 V, 31-Pin EconoPIM2, Panel
- RS-stocknr.:
- 273-2927
- Fabrikantnummer:
- FP75R12N2T7BPSA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tray van 15 eenheden)*
€ 879,315
(excl. BTW)
€ 1.063,965
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 15 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 15 - 15 | € 58,621 | € 879,32 |
| 30 + | € 57,156 | € 857,34 |
*prijsindicatie
- RS-stocknr.:
- 273-2927
- Fabrikantnummer:
- FP75R12N2T7BPSA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 7 | |
| Configuration | Common Emitter | |
| Package Type | EconoPIM2 | |
| Mount Type | Panel | |
| Channel Type | Type N | |
| Pin Count | 31 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.77V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.5mm | |
| Standards/Approvals | IEC 60749, IEC 60068, IEC 60747 | |
| Length | 107.5mm | |
| Width | 45 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 7 | ||
Configuration Common Emitter | ||
Package Type EconoPIM2 | ||
Mount Type Panel | ||
Channel Type Type N | ||
Pin Count 31 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.77V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 20.5mm | ||
Standards/Approvals IEC 60749, IEC 60068, IEC 60747 | ||
Length 107.5mm | ||
Width 45 mm | ||
Automotive Standard No | ||
The Infineon three phase PIM IGBT module with IGBT7, emitter controlled 7 diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings.
High reliability and power density
Copper base plate for optimized heat spread
High power density
Solder contact technology
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