Semikron Danfoss SKM100GB125DN, Type N-Channel Dual Half Bridge IGBT Module, 100 A 1200 V, 7-Pin SEMITRANS, Panel
- RS-stocknr.:
- 468-2410
- Fabrikantnummer:
- SKM100GB125DN
- Fabrikant:
- Semikron Danfoss
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 218,26
(excl. BTW)
€ 264,09
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 2 stuk(s) vanaf 16 maart 2026
- Plus verzending 164 stuk(s) vanaf 23 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 218,26 |
| 2 - 4 | € 207,33 |
| 5 - 9 | € 197,09 |
| 10 - 19 | € 187,05 |
| 20 + | € 177,66 |
*prijsindicatie
- RS-stocknr.:
- 468-2410
- Fabrikantnummer:
- SKM100GB125DN
- Fabrikant:
- Semikron Danfoss
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Semikron Danfoss | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 100A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Package Type | SEMITRANS | |
| Configuration | Dual Half Bridge | |
| Mount Type | Panel | |
| Channel Type | Type N | |
| Pin Count | 7 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.85V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -40°C | |
| Length | 94.5mm | |
| Width | 34.5 mm | |
| Standards/Approvals | No | |
| Height | 30.5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Semikron Danfoss | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 100A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Package Type SEMITRANS | ||
Configuration Dual Half Bridge | ||
Mount Type Panel | ||
Channel Type Type N | ||
Pin Count 7 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.85V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -40°C | ||
Length 94.5mm | ||
Width 34.5 mm | ||
Standards/Approvals No | ||
Height 30.5mm | ||
Automotive Standard No | ||
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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